Department of Electrical, Electronic, and Communication Engineering,
 Faculty of Science and Engineering, Chuo University
 Graduate School of Science and Engineering, Chuo University

Publications
International Conference Journal Book United States Patents
Japanese Patents European Patents German Patents Korean Patents
Taiwan Patents Domestic Conference Review Media
Japanese Patents
Ken Takeuchi, Mayumi Fukuda, “Control device and a data storage device” J.P. 5,569,936, July 4, 2014.
Ken Takeuchi, Mayumi Fukuda, “Data processing device and a control device and data storage device” J.P. 5,553,309, June 6, 2014.
Ken Takeuchi, Shuhei Tanakamaru, “Data I / O controller and the semiconductor memory device system” J.P. 5,467,270, February 7, 2014.
Ken Takeuchi, Takayasu Sakurai, Tadashi Yasufuku, Koichi Ishida, Makoto Takamiya, “Integrated circuit device” J.P. 5,504,507, March 28, 2014.
Hiroshi Maejima, Katsuaki Isobe, Takumi Abe and Ken Takeuchi, “NAND flash memory device and memory device,” J.P. 4,928,830, February 17, 2012.
Ken Takeuchi, “Semiconductor memory device,” J.P. 4,828,901, September 22, 2011.
Ken Takeuchi, Takuya Futatsuyama and Koichi Kawai, “Non-volatile semiconductor memory device,” J.P. 4,746,326, May 20, 2011.
Hiroshi Nakamura, Seiichi Aritome, Kenichi Imamiya, Hideko Oodaira, Ken Takeuchi, Kazuhiro Shimizu and Kazuhito Narita, “Semiconductor memory device,” J.P. 4,634,973, November 26, 2010.
Koji Hosono, Hiroshi Nakamura, Ken Takeuchi and Kenichi Imamiya, “Nonvolatile semiconductor memory device,” J.P. 4,550,855, July 16, 2010.
Koji Hosono, Hiroshi Nakamura, Ken Takeuchi and Kenichi Imamiya, “Nonvolatile semiconductor memory device,” J.P. 4,550,854, July 16, 2010.
Hiroshi Nakamura, Hideko Oodaira, Kenichi Imamiya, Ken Takeuchi and Seiichi Aritome, “Nonvolatile semiconductor memory device,” J.P. 4,550,686, July 16, 2010.
Koji Hosono, Hiroshi Nakamura, Ken Takeuchi and Kenichi Imamiya, “Nonvolatile semiconductor memory device,” J.P. 4,543,055, July 2, 2010.
Kazushige Kanda, Tamio Ikehashi, Ken Takeuchi and Kenichi Imamiya, “Semiconductor integrated circuit,” J.P. 4,537,964, June 25, 2010.
Ken Takeuchi, “Non-volatile semiconductor memory device,” J.P. 4,427,361, December 18, 2009.
Takuya Futatsuyama and Ken Takeuchi, “Semiconductor memory device and memory card,” J.P. 4,417,813, December 4, 2009.
Tamio Ikehashi, Ken Takeuchi and Toshihiko Himeno, “Non-volatile semiconductor memory and test method,” J.P. 4,413,406, November 27, 2009.
Ken Takeuchi, Hiroshi Nakamura and Tomoharu Tanaka, “Voltage bias circuit,” J.P. 4,398,986, October 30, 2009.
Ken Takeuchi and Tomoharu Tanaka, “Non-volatile semiconductor memory device,” J.P. 4,364,207, August 28, 2009.
Kazushige Kanda, Kenichi Imamiya, Hiroshi Nakamura, Ken Takeuchi and Tamio Ikehashi, “Semiconductor device and nonvolatile semiconductor memory device," J.P. 4,351,819, July 31, 2009.
Ken Takeuchi and Tomoharu Tanaka, “Nonvolatile semiconductor memory device,” J.P. 4,302,118, May 1, 2009.
Ken Takeuchi and Tomoharu Tanaka, “Nonvolatile semiconductor memory device,” J.P. 4,302,117, May 1, 2009.
Koji Hosono, Tamio Ikehashi, Tomoharu Tanaka, Kenichi Imamiya, Hiroshi Nakamura and Ken Takeuchi, “Semiconductor memory device,” J.P. 4,250,325, January 23, 2009.
Ken Takeuchi, “Non-volatile semiconductor memory,” J.P. 4,170,604, August 15, 2008.
Hiroshi Nakamura, Kenichi Imamiya and Ken Takeuchi, “Semiconductor memory device,” J.P. 4,157,559, July 18, 2008.
Tomoharu Tanaka, Hiroshi Nakamura and Ken Takeuchi, “Non-volatile semiconductor memory device,” J.P. 4,157,189, July 18, 2008.
Koji Hosono, Muneo Ito and Ken Takeuchi, “Internal voltage generating circuit and semiconductor memory,” J.P. 4,031,142, October 26, 2007.
Ken Takeuchi, Koji Sakui and Tomoharu Tanaka, “Nonvolatile semiconductor memory device,” J.P. 4,021,806, October 5, 2007.
Ken Takeuchi, Hiroshi Nakamura and Tomoharu Tanaka, “Voltage bias circuit,” J.P. 3,993,582, August 3, 2007.
Ken Takeuchi, Hiroshi Nakamura and Tomoharu Tanaka, “Semiconductor memory device,” J.P. 3,993,581, August 3, 2007.
Koji Hosono, Hiroshi Nakamura, Ken Takeuchi and Kenichi Imamiya, “Nonvolatile semiconductor memory device,” J.P. 3,983,969, July 13, 2007.
Ken Takeuchi and Tomoharu Tanaka, “Semiconductor memory device,” J.P. 3,961,989, May 25, 2007.
Ken Takeuchi and Tomoharu Tanaka, “Voltage generating circuit,” J.P. 3,954,245, May 11, 2007.
Ken Takeuchi, Tamio Ikehashi and Toshihiko Himeno, “Nonvolatile semiconductor memory device,” J.P. 3,916,862, February 16, 2007.
Hiroshi Nakamura, Hideko Oodaira, Kenichi Imamiya, Ken Takeuchi and Seiichi Aritome, “Nonvolatile semiconductor memory device,” J.P. 3,905,984, January 19, 2007.
Ken Takeuchi and Tomoharu Tanaka, “Nonvolatile semiconductor memory device,” J.P. 3,905,936, January 19, 2007.
Ken Takeuchi, Tomoharu Tanaka and Noboru Shibata, “Nonvolatile semiconductor memory,” J.P. 3,863,330, October 6, 2006.
Hiroshi Nakamura, Seiichi Aritome, Kenichi Imamiya, Hideko Oodaira, Ken Takeuchi, Kazuhiro Shimizu and Kazuhito Narita, “Manufacturing method of semiconductor memory device,” J.P. 3,853,981, September 15, 2006.
Koji Sakui, Ken Takeuchi, Kazunori Ohuchi and Fujio Masuoka, “Nonvolatile semiconductor memory device,” J.P. 3,853,850, September 15, 2006.
Kazushige Kanda, Tamio Ikehashi, Ken Takeuchi and Kenichi Imamiya, “Semiconductor integrated circuit,” J.P. 3,829,054, July 14, 2006.
Ken Takeuchi and Tomoharu Tanaka, “Memory system,” J.P. 3,828,376, July 14, 2006.
Hiroshi Nakamura, Kenichi Imamiya and Ken Takeuchi, “Semiconductor memory device,” J.P. 3,822,532, June 30, 2006.
Ken Takeuchi and Tomoharu Tanaka, “Nonvolatile semiconductor memory device,” J.P. 3,805,867, May 19, 2006.
Yoshihisa Sugiura, Kenichi Imamiya, Ken Takeuchi and Yoshihisa Iwata, “Semiconductor integrated circuit,” J.P. 3,802,239, May 12, 2006.
Toru Tanzawa, Ken Takeuchi and Tomoharu Tanaka, “Nonvolatile semiconductor memory device,” J.P. 3,648,304, February 18, 2005.
Ken Takeuchi, Hiroshi Nakamura and Tomoharu Tanaka, “Semiconductor memory device,” J.P. 3,637,211, January 14, 2005.
Hiroshi Nakamura, Koji Hosono, Kazushige Kanda and Ken Takeuchi, “Semiconductor memory device,” J.P. 3,624,100, December 3, 2004.
Ken Takeuchi and Tamio Ikehashi, “Nonvolatile semiconductor memory device,” J.P. 3,624,098, December 3, 2004.
Ken Takeuchi, Yuji Takeuchi and Kenichi Imamiya, “Nonvolatile semiconductor memory device,” J.P. 3,615,046, November 12, 2004.
Ken Takeuchi, “Nonvolatile semiconductor memory device,” J.P. 3,615,041, November 12, 2004.
Tamio Ikehashi, Kazushige Kanda, Yoshihisa Iwata, Hiroshi Nakamura, Ken Takeuchi and Koji Hosono, “Semiconductor integrated circuit,” J.P. 3,600,461, September 24, 2004.
Ken Takeuchi and Koji Hosono, “Nonvolatile semiconductor memory device,” J.P. 3,595,691, September 10, 2004.
Ken Takeuchi and Tomoharu Tanaka, “Nonvolatile semiconductor memory device,” J.P. 3,592,887, September 3, 2004.
Ken Takeuchi and Tomoharu Tanaka, “Semiconductor memory device,” J.P. 3,590,270, August 27, 2004.
Ken Takeuchi, Koji Sakui and Kazunori Ohuchi, “Semiconductor memory device,” J.P. 3,581,170, July 30, 2004.
Ken Takeuchi and Tomoharu Tanaka, “Semiconductor memory device,” J.P. 3,576,763, July 16, 2004.
Tomoharu Tanaka, Toru Tanzawa and Ken Takeuchi, “Semiconductor memory device,” J.P. 3,563,702, June 11, 2004.
Ken Takeuchi, Tomoharu Tanaka, Seiichi Aritome and Koji Sakui, “Nonvolatile semiconductor memory device,” J.P. 3,532,659, March 12, 2004.
Ken Takeuchi, Tomoharu Tanaka and Hiroshi Nakamura, “Nonvolatile semiconductor memory device,” J.P. 3,425,340, May 2, 2003.
Tomoharu Tanaka and Ken Takeuchi, “Multi-level memory,” J.P. 3,409,986, March 20, 2003.
Ken Takeuchi and Tomoharu Tanaka, “Nonvolatile semiconductor memory device,” J.P. 3,400,214, February 21, 2003.
Toru Tanzawa, Tomoharu Tanaka and Ken Takeuchi, “Semiconductor memory,” J.P. 3,294,153, April 5, 2002.
Seiichi Aritome, Tomoharu Tanaka and Ken Takeuchi, “Nonvolatile semiconductor memory device,” J.P. 3,238,576, October 5, 2001.
Ken Takeuchi and Tomoharu Tanaka, “Semiconductor memory device and memory system,” J.P. 3,210,259, July 13, 2001.
Ken Takeuchi and Tomoharu Tanaka, “Memory system,” J.P. 3,200,012, June 15, 2001.
Ken Takeuchi and Tomoharu Tanaka, “Nonvolatile semiconductor memory device,” J.P. 3,200,006, June 15, 2001.
Tomoharu Tanaka, Toru Tanzawa and Ken Takeuchi, “Semiconductor memory device,” J.P. 3,176,011, April 6, 2001.
Ken Takeuchi and Tomoharu Tanaka, “Nonvolatile semiconductor memory device,” J.P. 3,172,086, March 23, 2001.

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