Department of Electrical, Electronic, and Communication Engineering,
 Faculty of Science and Engineering, Chuo University
 Graduate School of Science and Engineering, Chuo University

International Conference Journal Book United States Patents
Japanese Patents European Patents German Patents Korean Patents
Taiwan Patents Domestic Conference Review Media
 Taiwan Patents
Ken Takeuchi, "Semiconductor memory system," T.P. I321323, March 1, 2010.
Ken Takeuchi and Koichi Kawai, “Semiconductor integrated circuit device”, T.P. I309041, April 21, 2009.
Ken Takeuchi and Tomoharu Tanaka, “Voltage generating circuit capable of preventing the variation of threshold value of a memory cell by a temperature change in a flash memory”, T.P. 578294, March 1, 2004.
Tamio Ikehashi, Ken Takeuchi and Toshihiko Himeno, “Semiconductor memory device and test method thereof by resetting the address of the defective region stored in the first register and the trimming value stored in the second register”, T.P. 564545, December 1, 2003.
Ken Takeuchi, “Nonvolatile semiconductor memory using one SRAM latch circuit and DRAM to replace the traditional two latch circuits in a 4-bit NAND cell type EEPROM”, T.P. 550795, September 1, 2003.
Ken Takeuchi, Tomoharu Tanaka and Noboru Shibata, “Nonvolatile semiconductor memory having plural data storage portions for a bit line connected to memory cells”, T.P. 497266, August 1, 2002.
Koji Hosono, Hiroshi Nakamura, Ken Takeuchi and Kenichi Imamiya, “Non-volatile semiconductor memory device with the capability of providing the EEPROM having rewrite/read circuit such that the fast access function or multi-value logic operation function can be realized by the individual optimum condition”, T.P. 485601, May 1, 2002.
Tomoharu Tanaka and Ken Takeuchi, “Memory having plurality of threshold level in the memory cell a semiconductor memory having flash memory, EEPROM,” T.P. 379450, January 11, 2000.

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