Department of Electrical, Electronic, and Communication Engineering,
Faculty of Science and Engineering, Chuo University
Graduate School of Science and Engineering, Chuo University

TOPICS
2017 2016 2015 2014 2013 2012 2011 2010 2009
2008
2009
Mar24, 10 Presentation; "Low-power SSD / Fe-NAND flash memory technology" at Silicon Platform Technology hosted by the Silicon Technology division, the Japan Society of Applied Physics.
Mar19, 10 Honda(B4) received the School of Engineering Dean's Award on behalf of the Department of Electrical Engineering.
Mar19, 10 Hatanaka(M2) received the excellent graduation thesis prize of the Department of Electrical Engineering and Information Systems.
Mar19, 10 Presentation by Prof.Takeuchi; "Fully utilize SSD --- Next Generation Storage" at NE academy
Mar17, 10 Presentation: Hatanaka(M2), Yajima(M2), Noda(M2), Tanakamaru(M1)
at The Japan Society of Applied Physics
Mar12, 10 Publication: EE Time Japan in the March issue featured Fe(Ferroelectric)-SRAM Tahekuchi Lab. had developed.
Mar01, 10 Publication: "Inductor and TSV Design of 20-V Boost Converter for Low Power 3D Solid State Drive with NAND Flash Memories" in the March 1st issue of IEICE TRANSACTIONS on Electronics .
Feb12, 10 Publication; Nikkei electronics Tech-on reported the session 24(DRAM & Flash Memory) on ISSCC that Prof. Takeuchi chaired.
Feb24, 10 Presentation by Prof.Takeuchi; "High-reliability and low-voltage Fe-NAND flash memory technology for data center" at the seminnar on Technical Information Institute
Jan29, 10 Presentation; "A 0.5V Operation, 32% Lower Active Power, 42% Lower Leakage Current, Ferroelectric 6T-SRAM with VTH Self-Adjusting Function for 60% Larger Static Noise Margin" at IEDM presentation
Jan12, 10 Nikkei electronics Tech-On featured Prof.Takeuchi.
Jan11, 10 Publication; Nikkei electronics in the Jan 11th issue featured 0.5V Operation Ferroelectric SRAM that Tahekuchi Lab. had developed.
Jan09, 10 Tanakamaru (M1) received IEEE EDS Japan Chapter Student Award.
Dec19, 09 Workshop; CREST "DipendableVLSI system workshop 2009" on Dec.19, 10:00~17:45 at Takeda hall, Hongo campus, the University of Tokyo.
Dec18, 09 Publication; EE Times Japan introduced Ferroelectric SRAM presented at IEDM.
Dec15, 09 Invited Talk; "Systemizing NAND Flash memory" at Electronics Forum, the National Institute of Advanced Industrial Science and Technology
Dec11, 09 Publication; "Organic Nonvolatile Memory Transistors for Flexible Sensor Arrays,” Science, vol. 326, no. 5959, pp. 1516-1519, December 2009.
Dec08, 09 Presentation by Tanakamaru(M1); "A 0.5V Operation, 32% Lower Active Power, 42% Lower Leakage Current, Ferroelectric 6T-SRAM with VTH Self-Adjusting Function for 60% Larger Static Noise Margin" at IEDM
Dec08, 09 Publication; Nikkei electronics Tech-On introduced the technology presented at IEDM by Tanakamaru (M1).
Nov26, 09 Keynote Speech; "Low-power 3D-integrated SSD for Green IT" at Technical Symposium presented by Electronic Journal. )
Nov09, 09 Publication; "Semiconductor Technology yearbook 2010" publication by Nikkei Microdevices.
Oct19, 09 Publication; "Operational method of a ferroelectric (Fe)-NAND flash memory array" (ShouyuWang, Mitue Takahashi, Qiu-Hong Li, Ken Takeuchi and Shigeki Sakai) in SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Oct16, 09 Nikkei Electronics featured CREST/SSD project
Oct09, 09 Presentation by Yajima(M2); "A Negative Word-line Voltage Step-Down Erase Pulse Scheme with ΔVTH= 1/6 ΔVERASE for Enterprise SSD Application Ferroelectric(Fe)-NAND Flash Memories" at SSDM (2009 International Conference on Solid State Devices and Materials)
Oct07, 09 Presentation by Noda (M2); "A 1.2V Operation 2.43 Times Higher Power Effi ciency Adaptive Charge Pump Circuit with Optimized VTH at Each Pump Stage for Ferroelectric (Fe)-NAND Flash Memories" at SSDM Late News.
Oct01, 09 Publication; "SSD 2010" publication by Nikkei Electronics.
Sep28, 09 Presentation; "Effect of Resistance of TSV’s on Performance of Boost Converter for Low Power 3D SSD with NAND Flash Memories" at 3D-IC (IEEE International Conference on 3D System Integration) in San Francisco.
Sep23, 09 Presentation by Prof. Takeuchi "Solid State Drive (SSD) and Memory Subsystem Innovation" at CMOS Emerging Technologies in Vancouver
Sep18, 09 "Dependable Wireless Solid-State Drive (SSD)" was adopted by Core Research of Evolutional Science & Technology (CREST)
Sep15, 09 Presentation by Yajima (M2) and Noda (M2); "Ferroelectric(Fe)-NAND Flash Memory with Non-volatile Page Buffer for Data Center Application Enterprise Solid-State Drives (SSD)" at the Institute of Electronics, Information and Communication Engineers (IEICE) Society Conference
Sep15, 09 Presentation by Hatanaka(M2); "A Zero Vth Memory Cell Ferroelectric-NAND Flash Memory with 32% Read Disturb, 24% Program Disturb, 10% Data Retention Improvement for Enterprise SSD" at ESSDERC(European Solid-State Device Research Conference).
Aug19, 09 Presentation; "Inductor Design of 20-V Boost Converter for Low Power 3D Solid State Drive with NAND Flash Memories" at ISLPED(International Symposium on Low Power Electronics and Design)
Aug04, 09 Presentation: "Technology trend of digital LSI: Memory technology" at Summer School of IEICE Technical Committee on Integrated Circuits and Devices
Jul29, 09 Nikkei Microdevices in the August issue featured Flash Memory and introduced the technology of Fe-NAND Flash Memory.
Jul07, 09 EE Times featured Fe-NAND presented at IEEE Symposium on VLSI Circuits.
Jul07, 09 Green IT Project (Ultra low power circuit / System technology development) was adopted by New Energy and Industrial Technology Development Organization (NEDO).
Jul03, 09 Nikkei electronics introduced the technology presented at IEEE Symposium on VLSI Circuits.
Jun29, 09 Nikkei electronics in the Jun.29 issue (p.16-17) featured the speed-up technology of SSD developed by Takeuchi lab.
Jun25, 09 Our reserch on the Fe-NAND flash memory was adopted by New Energy and Industrial Technology Development Organization (NEDO)
Jul24, 09 Presentation: "Basic and applied technology to fully utilize SSD" at Nikkei Electronics Academy
Jul16, 09 Presentation by Yajima(M2); Ferroelectric(Fe)-NAND Flash Memory with Non-volatile Page Buffer for Data Center Application Enterprise Solid-State Drives (SSD)
Presentation by Tanakamaru(M1); A 60pJ, 3-Clock Rising Time, VTH Loss Compensated Word-line Booster Circuit
at IEICE Technical Committee on Integrated Circuits and Devices
Jun25, 09 The press reports on Fe-NAND Flash memory presented at Symposium on VLSI Circuits
Asahi Shimbun ・Nikkei BP ・The Nikkan Kogyo Shimbun
PC WatchTech-On (Jun.16)Tech-On (Jun.17)The University of Tokyo Newspaper ・The Nikkan Kogyo Shimbun
Jun16, 09 Presentation by Hatanaka(M2); "Ferroelectric(Fe)-NAND Flash Memory with Non-Volatile Page Buffer for Data Center Application Enterprise Solid-State Drives (SSD)" at IEEE Symposium on VLSI Circuits in Kyoto.
Jun11, 09 Prof.Takeuchi held the press conference about Fe-NAND Flash memory presented at Symposium on VLSI Circuits.
Jun07, 09 Invited Talk by Hatanaka(M2); "First step on starting to research in LSI: Development of the design environment --- working for the start up Takeuchi Lab ---" at VDEC designers forum 2009
May27, 09 Entrance Examination Information Session
May 27 (Wed) 1:30PM at Hongo campus,
3:00PM at Takeuchi Lab. Faculty of Engineering Bldg.2, Rm# 122B2
May21, 09 Publication: Nikkei electronics Tech-On featured interviews with Prof.Takeuchi.
May21, 09 Yasufuku (Takamiya Lab./D1) received the Best Presentation Award at LSI and Systems Workshop 2009 in the presentation of 3D-integrated SSD. "Program voltage (20V) generator circuit for 3D-integrated NAND Flash SSD"
May19, 09 Presentation; "Program voltage (20V) generator circuit for 3D-integrated NAND Flash SSD " at LSI and Systems Workshop 2009
May14, 09 Publication; the press conference for 3D-integrated SSD in the April issue of Seiken-News.
May12, 09 Presentation by Tanakamaru(M1); "A 60pJ, 3-Clock Rising Time, Vth Loss Compensated Word-line Booster Circuit for 0.5V Power Supply Embedded/Discrete DRAMs" at IEEE International Memory Workshop(IMW) in Monterey
Apr20, 09 Publication; "How to relate to SSD: to improve reliability combining the control LSI, the OS and the memory" in the April 20 issue of Nikkei electronics
Apr14, 09 Invited Talk; "A 1.8V 30nJ Adaptive Program-Voltage (20V) Generator for 3D-Integrated NAND Flash SSD" at Technical Committee on Integrated Circuits and Devices (ICD), Information and Communication Engineers (IEICE)
Apr02, 09 Publication; "Novel Co-Design of NAND Flash Memory and NAND Flash Controller Circuits for Sub-30 nm Low-Power High-Speed Solid-State Drives (SSD)" in the April issue of IEEE Journal of Solid-State Circuits
Apr02, 09 Presentation; Hatanaka(M1) makes a presentation "Evaluation of a program disturb in ferroelectric(Fe)-FET for the Fe-NAND flash memory cell" at JSAP the 56th Spring Meeting, 2009

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