Department of Electrical, Electronic, and Communication Engineering,
Faculty of Science and Engineering, Chuo University
Graduate School of Science and Engineering, Chuo University

TOPICS
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2008
2010
Mar31,11 Shuhei Tanakamaru(M2) has been selected for "President's Award".
Feb22,11 Presentation at ISSCC2010:
Shuhei Tanakamaru, Chinglin Hung, Atsushi Esumi, Mitsuyoshi Ito, Kai Li and Ken Takeuchi, "95% Lower Bit Error Rate, 35% Lower Power Intelligent Solid-State Drives (SSDs) with Asymmetric Coding and Stripe Pattern Elimination Algorithm," IEEE International Solid-State Circuits Conference (ISSCC), pp. 204-205, February 2011.
Feb20,11 Prof.Takeuchi will organize ISSCC Forum (F2: Ultra-Low Voltage VLSIs for Energy Efficient Systems).
Jan22,11 Invited Talk : Meeting on Gate-Stack Technology
Jan10,11 Contributed article: Alumni of "Todai-denki"
Jan05,11 An article about Prof. Takeuchi is apeared in the Asahi Shimbun.
Dec22,10 Publication :
"A 0.5-V Six-Transistor Static Random Access Memory with Ferroelectric-Gate Field Effect Transistors"
Shuhei Tanakamaru, Teruyoshi Hatanaka, Ryoji Yajima, Kousuke Miyaji, Mitsue Takahashi1, Shigeki Sakai1, and Ken Takeuchi
Dec16-17,10 Presentation by K.Honda, K.Higuchi, T.Hatanaka and S.Tanakamaru : Technical Committee on Integrated Circuits and Devices (ICD)
Dec13,10 Publication : OYO BUTURI Vol.79 No.12(2010)
Nov30,10 Presentation : Distributors Association of Foreign Semiconductors (DAFS)
Nov24,10 Publication : Nikkei Electronics Tech-On
Nov17,10 Presentation : Global COE symposium
Nov13,10 The thesis on SSD adopted by ISSCC 2011
"95%-Lower-BER 43%-Lower-Power Intelligent Solid-State Drive (SSD) with Asymmetric Coding and Stripe Pattern Elimination Algorithm"
Oct25,10 Wireless SSD project won first place in the ranking of Nikkei's most utility,marketability and novelty topics.
Oct19,10 Presentation by Prof.Takeuchi: "Storage Class Memory" at International Workshop on Future Information Processing Technologies (IWFIPT)
Date  October 18-20, 2010 
Place  Shiran Kaikan/Inamori Hall, Kyoto, Japan
Oct18,10 Publication: Nikkei Electronics Tech-On(Oct18)
Oct13,10 Publication: Nikkei Newspaper and Sankei Newspaper featured our joint research on ReRAM.
Sep30,10 We launch joint research on PRAM with "Green Nanoelectronics Center."
Sep29,10 Presentation by Prof.Takeuchi: "Fully utilize SSD" at NE academy
Date: Sep29 10:00~17:00
Sep29,10 Publication: JSSC(Journal of Solid-State Circuits)
Teruyoshi Hatanaka, Ryoji Yajima, Takeshi Horiuchi, Shouyu Wang, Xizhen Zhang, Mitsue Takahashi, Shigeki Sakai and Ken Takeuchi,
"Ferroelectric (Fe)-NAND Flash Memory with Batch Write Algorithm and Smart Data Store to the Non-volatile Page Buffer for Data Center Application High Speed and Highly Reliable Enterprise Solid-State Drives (SSD),"
IEEE J. of Solid-State Circuits, vol. 45, no. 10, pp. 2156-2164, October 2010.
Sep27,10 Publication: Nikkei Electronics Tech-On introduced a presentation by Takeuchi Lab. at SSDM 2010. ECC technology for SSD with ReRAM buffer
Sep24,10 Presentation: 2010 International Conference on Solid State Devices and Materials (SSDM2010)
  • Sep24 9:00-10:20 Prof. K. Takeuchi
    Place:The University of Tokyo, Tokyo, Japan
    Session E-6 FeRAM (Room 241)
    E-6-2 "Current Status and Future Challenge of Fe-NAND/SRAM Cell Technology"
  • Sep24 12:15-12:30 M. Fukuda (Researcher)
    Session G-7 Data Converter Circuits (Room 243)
    G-7-4 "3.6-Times Higher Acceptable Raw Bit Error Rate, 97% Lower-Power, NV-RAM NAND & Integrated Solid-State Drives (SSDs) with Adaptive Codeword ECC"
Sep20,10 Presentation: CICC
Date: Sep20
"Elimination of Half Select Disturb in 8T-SRAM by Local Injected Electron Asymmetric Pass Gate Transistor"
Sep17.10 Our reserch on the Phase change RAM(PRAM) was adopted by National Institute of Advanced Industrial Science and Technology(AIST) 。detail
Sep15,10 Presentation by Prof. Takeuchi: The Japan Society of Applied Physics (JSAP)
Date: Sep15
Sep03.10 Inside NAND Flash Memories(Springer)
"18 Low power 3D-integrated SSD; K. Takeuchi."
Aug26,10 Presentation: ICDTechnical Committee on Silicon Device and Materials (SDM)
Date: Aug26 - 27
Topics: Low voltage/low power techniques, novel devices, circuits, and applications

・Aug26 17:30-19:00 Prof. Takeuchi
Panel Discussion

・Aug27 09:00-09:25 Tanakamaru (M2)
"Post-manufacturing, 17-times Acceptable Raw Bit Error Rate Enhancement, Dynamic Codeword Transition ECC Scheme for Highly Reliable Solid-State Drives, SSDs"

・Aug27 09:25-09:50 Miyaji (Project Research Associate)
"A 1.0V Power Supply, 9.5GByte/sec Write Speed, Single-Cell Self-Boost Program Scheme for Ferroelectric NAND Flash SSD "

・Aug27 09:50-10:15 Hatanaka (D1)
"A 60% Higher Write Speed, 4.2Gbps, 24-Channel 3D-Solid State Drive (SSD) with NAND Flash Channel Number Detector and Intelligent Program-Voltage Booster "

・Aug27 13:45-14:10 Miyaji (Project Research Associate)
"70% Read Margin Enhancement by VTH Mismatch Self-Repair in 6T-SRAM with Asymmetric Pass Gate Transistor by Zero Additional Cost, Post-Process, Local Electron Injection "
Aug09.10 Publication: Nikkei Electronics(Aug9)
Aug03,10 Presentation: ICD Summer Workshop 2010
Aug03 10:30 - 11:15
Aug03.10 The University of Tokyo Newspaper(Aug3)
Jul/29.10 Publication:
NEDO NewsTHE NIKKAN KOGYO SHINBUNNIKKEI
The Sankei Shimbun & Sankei Digital 1The Sankei Shimbun & Sankei Digital 2
Jul26.10 Publication:Nikkei Electronics(0726)
Jul09,10 Invited Talk: SYMPOSIUM ON SEMICONDUCTORS AND INTEGRATED CIRCUITS TECHNOLOGY
Jul 08 - 09, 2010
Jul05,10 Publication: the press reports on VLSI symposium

[SSD]
JST Press release, Nikkei Electronics Tech-On,
The Nikkan Kogyo Shimbun, Asahi Shimbun, Nikkei,
The Nikkan Kogyo Shimbun

[SRAM]
The University of Tokyo press release, Nikkei(1), Nikkei(2)
Nikkei Electronics Tech-On(1), Nikkei Electronics Tech-On(2),
Mainichi Communicationsw, Nikkei Electronics (Jun28),
The Nikkan Kogyo Shimbun
Jun26,10 Publication: Newton in the August issue
Jun22,10 Presentation by Miyaji(Project Research Associate): Technical Committee on Silicon Device and Materials (SDM)

Jun 22, 2010, 09:30 - 17:30
Topics: Science and Technology for Dielectric Thin Films for MIS Devices

15:15-15:35 "70% Read Margin Enhancement by VTH Mismatch Self-Repair in 6T-SRAM with Asymmetric Pass Gate Transistor by Zero Additional Cost, Post-Process, Local Electron Injection"
Kousuke Miyaji, Shuhei Tanakamaru, Kentaro Honda (Univ. of Tokyo), Shinji Miyano (STARC), Ken Takeuchi (Univ. of Tokyo)
Jun16,10 Presentation: Symposium on VLSI Circuits

・Miyaji(Researcher): "70% Read Margin Enhancement by VTH Mismatch Self-Repair in 6T-SRAM with Asymmetric Pass Gate Transistor by Zero Additional Cost, Post-Process, Local Electron Injection" (Jun 16)

・Hatanaka(D1): "A 60% Higher Write Speed, 4.2Gbps, 24-Channel 3D-Solid State Drive (SSD) with NAND Flash Channel Number Detector and Intelligent Program-Voltage Booster" (Jun 8)
Jun09,10 Publications: EE Times Japan featured Fe-NAND and ECC presented at IMW
Jun06,10 Hatanaka(D1) was selected as Reseasrch Fellowship for Young Scientist , Japan Society for the Promotion of Science.
Jun05,10 Presentaion by Prof.Takeuchi: VDEC designer Forum
May31,10 Publication: The Journal of Reliability Engineering Association of Japan
"High Reliability Technologies of Solid-State Drives (SSD)", vol. 32, no.3, pp. 156-161 , May 2010
Jun02,10 Entrance Examination Information Session
Jun 02 (Wed) 13:30 at Hongo campus,
15:00 at Takeuchi Lab. Faculty of Engineering Bldg.2, Rm# 122B2
May19,10 Publication: Nikkei Electronics Tech-On 2 presentations by Takeuchi Lab. at IMW.
No. 1
No. 2
May16,10 Presentation: IMW(International Memory Workshop)

・Prof. Takeuchi "Low Power 3D-integrated Solid-State Drive (SSD) with Adaptive Voltage Generator" (invited talk) (May 17)

・Miyaji(Researcher): "A 1.0V Power Supply, 9.5GByte/sec Write Speed, Single-Cell Self-Boost Program Scheme for Ferroelectric NAND Flash SSD" (May 17)

・Tanakamaru(M2): "Post-manufacturing, 17-times Acceptable Raw Bit Error Rate Enhancement, Dynamic Codeword Transition ECC Scheme for Highly Reliable Solid-State Drives, SSDs" (May18)
May10,10 Publication: Nikkei Electronics Tech-On featured VLSI Symposium
Apr28,10 Presentation by Prof. Takeuchi: Technical Seminar on Flash Memory / SSD sponsored by Electronic Journal.
Apr22,10 Presentation: Technical Committee on Integrated Circuits and Devices (ICD), Information and Communication Engineers (IEICE)

・Prof.Takeuchi: Panel Discussion

・Tanakamaru(M2): "32% Lower Active Power, 42% Lower Leakage Current Ferroelectric 6T-SRAM with VTH Self-Adjusting Function for 60% Larger Static Noise Margin (SNM)"

・Hatanaka(D1): "Ferroelectric (Fe)-NAND Flash Memory with Non-volatile Page Buffer for Data Center Application Enterprise Solid-State Drives (SSD) "
Apr08,10 Invited talk: MRS(Materials Research Society)

・Miyaji(Researcher): "A Ferroelectric NAND Flash Memory for Low-Power and Highly Reliable Enterprise SSDs and a Ferroelectric 6T-SRAM for 0.5V Low-Power CPU and SoC"

・Miyaji(Researcher): "Advanced NAND Flash Memory Devices and Solid-State Drives"
Apr01,10 Takeuchi Lab's web site renewal !

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