Department of Electrical, Electronic, and Communication Engineering,
Faculty of Science and Engineering, Chuo University
Graduate School of Science and Engineering, Chuo University

TOPICS
2017 2016 2015 2014 2013 2012 2011 2010 2009
2008
2016
Mar5,17 Publications:
  • Kota Tsurumi, Masahiro Tanaka and Ken Takeuchi
    “0.6 V operation, 16 % Faster Set/Reset ReRAM Boost Converter with Adaptive Buffer Voltage for ReRAM and NAND Flash Hybrid Solid-State Drives”
    IEEE International Symposium on Quality Electronic Design(ISQED)
  • Hirofumi Takishita, Yutaka Adachi and Ken Takeuchi
    “ReRAM-based SSD Performance Considering Verify-program Cycles and ECC Capabilities”
    Non-Volatile Memory Workshop(NVMW)
  • Toshiki Nakamura, Yoshiaki Deguchi, Atsuro Kobayashi and Ken Takeuchi
    “Heterogeneous-Integrated LDPC ECC of TLC NAND Flash Memory for Read-Hot&Cold Mixed Data Storage”
    Non-Volatile Memory Workshop(NVMW)
  • Sep4,16 Publications:
  • Chihiro Matsui, Yusuke Yamaga, Yusuke Sugiyama and Ken Takeuchi
    “8.9-times Performance Improvement by Tri-Hybrid Storage System with SCM and MLC/TLC NAND Flash Memory”
    International Conference on Solid State Devices and Materials(SSDM)
  • Yoshiaki Deguchi, Atsuro Kobayashi and Ken Takeuchi
    “47% Data-Retention Error Reduction of TLC NAND Flash Memory by Introducing Stress Relaxation Period with Round-Robin Wearleveling”
    International Conference on Solid State Devices and Materials(SSDM)
  • Masahiro Tanaka, Kota Tsurumi, Tomoya Ishii and Ken Takeuchi
    “Heterogeneously Integrated Program Voltage Generator for 1.0V Operation NAND Flash with Best Mix & Match of Standard CMOS Process and NAND Flash Process ”
    ESSCIRC-ESSDERC
  • Apr17,16 Publications:
  • Atsuro Kobayashi, Tsukasa Tokutomi and Ken Takeuchi
    “Versatile TLC NAND Flash Memory Control to Reduce Read Disturb Errors by 85% and Extend Read Cycles by 6.7-times of Read-Hot and Cold Data for Cloud Data Centers”
    IEEE Symposium on VLSI Technologies
  • Tomoaki Yamada, Chihiro Matsui and Ken Takeuchi
    “Optimal Combinations of SCM Characteristics and Non-volatile Cache Algorithms for High-Performance SCM/NAND Flash Hybrid SSD”
    IEEE Silicon Nanoelectronics Workshop(SNW)
  • Hirofumi Takishita, Takahiro Onagi and Ken Takeuchi
    “Storage Class Memory Based SSD Performance in Consideration of Error Correction Capabilities and Write/Read Latencies”
    IEEE Silicon Nanoelectronics Workshop(SNW)
  • Takashi Inose1, Tomoko Ogura Iwasaki1, Sheyang Ning1,2, Darlene Viviani2, Monte Manning2, X. M. Henry Huang2, Thomas Rueckes2 , and Ken Takeuchi1 1Chuo University, Tokyo, Japan, 2Nantero, Inc., Woburn, MA
    “Reliability Study of Carbon Nanotube Memory after Various Cycling Conditions”
    IEEE Silicon Nanoelectronics Workshop(SNW)
  • Yoshiaki Deguchi, Tsukasa Tokutomi and Ken Takeuchi
    “System-Level Error Correction by Read-Disturb Error Model of 1Xnm TLC NAND Flash Memory for Read-Intensive Enterprise Solid-State Drives (SSDs)”
    IEEE International Reliability Physics Symposium(IRPS)
  • Tomonori Takahashi, Senju Yamazaki and Ken Takeuchi
    “Data-Retention Time Prediction of Long-term Archive SSD with Flexible-nLC NAND Flash”
    IEEE International Reliability Physics Symposium(IRPS)
  • Yoshio Nakamura, Tomoko Iwasaki and Ken Takeuchi
    “Machine Learning-Based Proactive Data Retention Error Screening in 1Xnm TLC NAND Flash”
    IEEE International Reliability Physics Symposium(IRPS)
  • Yusuke Sugiyama, Tomoaki Yamada, Chihiro Matsui, Takahiro Onagi and Ken Takeuchi
    “Application Dependency of 3-D Integrated Hybrid Solid-State Drive System with Through-Silicon Via Technology”
    International Conference on Electronics Packaging(ICEP)
  • Apr1,16 Member list renewal

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