Department of Electrical, Electronic, and Communication Engineering,
Faculty of Science and Engineering, Chuo University
Graduate School of Science and Engineering, Chuo University

TOPICS
2018 2017 2016 2015 2014 2013 2012 2011 2010 2009
2008
2018
Aug31,18 Publications:
  • Shun Suzuki, Yoshiaki Deguchi, Toshiki Nakamura and Ken Takeuchi
    “Endurance-Based Dynamic VTH Distribution Shaping of 3D-TLC NAND Flash Memories to Suppress Both Lateral Charge Migration and Vertical Charge De-Trap and Increase Data-Retention Time by 2.7x”
    European Solid-State Device Research Conference (ESSDERC)
  • Kazuki Maeda1, Shinpei Matsuda1, Ryutaro Yasuhara2 and Ken Takeuchi1, 1Chuo University, Tokyo, Japan, 2Panasonic Semiconductor Solutions Co.,Ltd
    “Observation and Analysis of Bit-by-Bit Cell Current Variation During Data-Retention of TaOx-Based ReRAM”
    European Solid-State Device Research Conference (ESSDERC)
  • Aug03,18 Publications:
  • Shun Suzuki, Toshiki Nakamura, Kyoji Mizoguchi and Ken Takeuchi
    “Horizontal Error Detection & Vertical LDPC ECC for Reliable 3D-TLC NAND Flash”
    Flash Memory Summit
  • Toshiki Nakamura and Ken Takeuchi
    “Artificial Neural Network Coupled LDPC ECC for 3D-NAND Flash Memories”
    Flash Memory Summit
  • Keita Mizushina, Toshiki Nakamura and Ken Takeuchi
    “Layer-by-layer Adaptively Optimized ECC for NAND Flash SSD Storing CNN Weights”
    Flash Memory Summit
  • Jun04,18 Publications:
  • Yusuke Yamaga, Yoshiaki Deguchi, Shohei Fukuyama and Ken Takeuchi
    “5x Reliability Enhanced 40 nm TaOx Approximate-ReRAM with Domain-Specific Computing for RealTime Image Recognition of IoT Edge Devices”
    IEEE Symposium on VLSI Technology and Circuits
  • Yoshiaki Deguchi and Ken Takeuchi
    “280x Data-retention Lifetime and 11x Write/Erase Endurance Enhancement of TLC NAND Flash memories storing Deep Neural Network Weight Data by Data Compression”
    IEEE Silicon Nanoelectoronics Workshop (SNW)
  • Yusuke Sugiyama, Chihiro Matsui and Ken Takeuchi
    “75% Performance Boost of RAID-5 Storage with SSDs by Garbage Collection Overhead Reduction for 3D NAND Flash Memory”
    IEEE Silicon Nanoelectoronics Workshop (SNW)
  • May11,18 Publications:
  • Yoshiaki Deguchi and Ken Takeuchi
    “3D-NAND Flash Solid-State Drive (SSD) for Deep Neural Network Weight Storage of IoT Edge Devices with 700x Data-retention Lifetime Extention”
    IEEE International Memory Workshop (IMW)
  • Yoshiaki Deguchi, Kazuki Maeda, Shun Suzuki, Toshiki Nakamura and Ken Takeuchi
    “Error-Reduction Controller Techniques of TaOx-based ReRAM for Deep Neural Networks to Extend Data-Retention Lifetime by Over 1700x”
    IEEE International Memory Workshop (IMW)
  • Apr17,18 Publications:
  • Kenta Suzuki, Masahiro Tanaka, Kota Tsurumi and Ken Takeuchi
    “43 % Reduced Program Time, 23 % Energy Efficient ReRAM Boost Converter with PMOS Switching Transistor and Boosted Buffer Circuit for ReRAM and NAND Flash Hybrid SSDs”
    IEEE International Conference on Electronics Packaging and iMAPS All Asia Conference (ICEP-IAAC 2018)
  • Masaru Nakanishi, Yutaka Adachi, Chihiro Matsui, Yusuke Sugiyama and Ken Takeuchi
    “Application-oriented Wear-leveling Optimization of 3D TSV-integrated Storage Class Memory-based Solid State Drives”
    IEEE International Conference on Electronics Packaging and iMAPS All Asia Conference (ICEP-IAAC 2018)
  • Apr2,18 Member list renewal

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